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MC1413D 参数 Datasheet PDF下载

MC1413D图片预览
型号: MC1413D
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压,大电流达林顿晶体管阵列 [High Voltage, High Current Darlington Transistor Arrays]
分类和应用: 晶体晶体管功率双极晶体管达林顿晶体管开关光电二极管
文件页数/大小: 6 页 / 65 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MC1413, MC1413B, NCV1413B
PACKAGE DIMENSIONS
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE J
−A−
16
9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0
_
7
_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0
_
7
_
0.229
0.244
0.010
0.019
−B−
1
8
P
8 PL
0.25 (0.010)
M
B
S
G
F
K
C
−T−
SEATING
PLANE
R
X 45
_
M
D
16 PL
M
J
0.25 (0.010)
T B
S
A
S
ON Semiconductor
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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6
MC1413/D