MBRS540T3
Preferred Device
Surface Mount Schottky
Power Rectifier
The MBRS540T3 employs the Schottky Barrier principle in a large
area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical
to the system.
Features
http://onsemi.com
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SCHOTTKY BARRIER
RECTIFIER
5.0 AMPERES, 40 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
Pb−Free Package is Available
Mechanical Characteristics
SMC
CASE 403
PLASTIC
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Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in
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Weight: 217 mg (Approximately)
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Finish: All External Surfaces Corrosion Resistant and Terminal
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Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Rating: Machine Model, C (> 400 V)
Human Body Model, 3B (> 8000 V)
Device Meets MSL 1 Requirements
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 105°C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave,
20 KHz, T
C
= 80°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Value
40
Unit
V
MARKING DIAGRAM
AYWW
B540G
G
MAXIMUM RATINGS
B540
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
5
10
A
A
Device
MBRS540T3
MBRS540T3G
Package
SMC
SMC
(Pb−Free)
Shipping
†
2500/Tape & Reel
2500/Tape & Reel
I
FSM
190
A
Tstg
T
J
dv/dt
−65 to +150
−65 to +150
10,000
°C
°C
V/ms
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
©
Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 5
Publication Order Number:
MBRS540T3/D
ONSEMI [ ON SEMICONDUCTOR ]
