MBR4045PT
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 125°C)
Per Diode
Per Device
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz
@ T
C
= 90°C) Per Diode
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase,
60 Hz)
Peak Repetitive Reverse Current,
(2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
(Forward Current Applied)
Voltage Rate of Change
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Max
45
Unit
V
A
20
40
40
A
I
FRM
I
FSM
400
A
I
RRM
T
stg
T
J
T
J(pk)
dv/dt
2.0
−65
to +175
−65
to +175
175
10,000
A
°C
°C
°C
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Minimum Pad
Minimum Pad
Symbol
R
qJC
R
qJA
Max
1.4
55
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2)
(i
F
= 20 A, T
J
= 25°C)
(i
F
= 20 A, T
J
= 125°C)
(i
F
= 40 A, T
J
= 25°C)
(i
F
= 40 A, T
J
= 125°C)
Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
J
= 25°C)
(Rated DC Voltage, T
J
= 125°C)
Symbol
V
F
Min
−
−
−
−
−
−
Typ
0.53
0.46
0.64
0.62
0.09
30
Max
0.70
0.60
0.80
0.75
1.0
50
Unit
V
i
R
mA
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