MBR2535CTG, MBR2545CTG
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 160°C)
Peak Repetitive Forward Current,
per Diode Leg (Rated V
R
, Square Wave, 20 kHz, T
C
= 150°C)
Non−Repetitive Peak Surge Current per Diode Leg
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
ESD Ratings: Machine Model = C
ESD Ratings:
Human Body Model = 3B
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
RRM
T
stg
T
J
dv/dt
ESD
Value
Unit
V
35
45
30
15
30
150
1.0
−65
to +175
−65
to +175
10,000
>400
>8000
A
A
A
A
°C
°C
V/ms
V
MBR2535CT
MBR2545CT
Per Device
Per Diode
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
(Per Leg)
Characteristic
Thermal Resistance,− Junction−to−Case
−
Junction−to−Ambient (Note 2)
2. When mounted using minimum recommended pad size on FR−4 board.
Symbol
R
qJC
R
qJA
Value
1.5
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode)
Symbol
V
F
Characteristic
Instantaneous Forward Voltage
(Note 3)
Condition
I
F
= 15 Amp, T
J
= 25°C
I
F
= 15 Amp, T
J
= 125°C
I
F
= 30 Amp, T
J
= 25°C
I
F
= 30 Amp, T
J
= 125°C
Rated dc Voltage, T
J
= 25°C
Rated dc Voltage, T
J
= 125°C
Min
−
−
−
−
−
−
Typ
−
0.50
−
0.65
−
9.0
Max
0.62
0.57
0.82
0.72
0.2
25
Unit
V
I
R
Instantaneous Reverse Current
(Note 3)
mA
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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