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MBR0540T1G 参数 Datasheet PDF下载

MBR0540T1G图片预览
型号: MBR0540T1G
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基整流器电源SOD- 123功率表面贴装封装 [Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package]
分类和应用:
文件页数/大小: 6 页 / 69 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBR0540T1, MBR0540T3
dc
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
SQUARE WAVE
I
pk
/I
o
=
p
I
pk
/I
o
= 5
I
pk
/I
o
= 10
I
pk
/I
o
= 20
FREQ = 20 kHz
PFO , AVERAGE POWER DISSIPATION (WATTS)
I O , AVERAGE FORWARD CURRENT (AMPS)
0.8
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I
O
, AVERAGE FORWARD CURRENT (AMPS)
I
pk
/I
o
= 10
I
pk
/I
o
= 20
I
pk
/I
o
= 5
SQUARE WAVE
I
pk
/I
o
=
p
dc
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
TJ , DERATED OPERATING TEMPERATURE (
°
C)
100
T
J
= 25°C
C, CAPACITANCE (pF)
126
124
122
120
118
116
114
112
110
0
5.0
10
15
20
25
30
149°C/W
180°C/W
206°C/W
228°C/W
35
40
R
tja
= 118°C/W
10
0
5.0
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any
reverse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
= T
Jmax
− r(t)(Pf + Pr) where
T
J
may be calculated from the equation:
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as
T
J
= T
Jmax
− r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
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4