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MBR0530T1 参数 Datasheet PDF下载

MBR0530T1图片预览
型号: MBR0530T1
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基功率整流器塑料SOD- 123封装 [Surface Mount Schottky Power Rectifier Plastic SOD−123 Package]
分类和应用: 整流二极管光电二极管
文件页数/大小: 4 页 / 59 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBR0530T1, MBR0530T3
Preferred Devices
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
The MBR0530T1/3 uses the Schottky Barrier principle with a large
area metal−to−silicon power diode. Ideally suited for low voltage,
high frequency rectification or as free wheeling and polarity
protection diodes in surface mount applications where compact size
and weight are critical to the system. This package also provides an
easy to work with alternative to leadless 34 package style. These
state−of−the−art devices have the following features:
Features
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES
30 VOLTS
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94, V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
Pb−Free Packages are Available
Mechanical Characteristics
Reel Options:
SOD−123
CASE 425
STYLE 1
MBR0530T1 = 3,000 per 7 in reel / 8 mm tape
Reel Options:
MBR0530T3 = 10,000 per 13 in reel / 8 mm tape
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Rating
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
Value
30
Unit
V
MARKING DIAGRAM
B3 M
G
G
B3
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
L
= 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
R
)
ESD Rating:
Machine Model = C
Human Body Model = 3B
0.5
5.5
A
A
Preferred
devices are recommended choices for future use
and best overall value.
T
stg
T
J
dv/dt
−65 to +150
−65 to +125
1000
> 400
> 8000
°C
°C
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 4
Publication Order Number:
MBR0530T1/D