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MBR0520LT1G 参数 Datasheet PDF下载

MBR0520LT1G图片预览
型号: MBR0520LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基功率整流器塑料SOD- 123封装 [Surface Mount Schottky Power Rectifier Plastic SOD−123 Package]
分类和应用: 整流二极管光电二极管PC
文件页数/大小: 4 页 / 59 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBR0520LT1, MBR0520LT3
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
L
= 90°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
R
)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
stg
T
J
dv/dt
Value
20
Unit
V
0.5
5.5
−65 to +150
−65 to +125
1000
> 400
> 8000
A
A
°C
°C
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance; Junction−to−Ambient (Note 1)
Thermal Resistance; Junction−to−Lead
Symbol
R
qJA
R
qJL
Value
206
150
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 0.1 Amps)
(i
F
= 0.5 Amps)
Maximum Instantaneous Reverse Current (Note 2)
(V
R
= 10 V)
(Rated DC Voltage = 20 V)
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2%.
I
R
v
F
T
J
= 25°C
0.300
0.385
T
J
= 25°C
75
mA
250
mA
T
J
= 100°C
0.220
0.330
T
J
= 100°C
5 mA
8 mA
mA
V
http://onsemi.com
2