MAC97 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
75
200
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage
(I
TM
=
".85
A Peak; Pulse Width
v
2.0 ms, Duty Cycle
v
2.0%)
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Gate Non−Trigger Voltage
(V
D
= 12 V, R
L
= 100
W,
T
J
= 110°C)
All Four Quadrants
Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 1.0 A pk, I
G
= 25 mA)
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, T
C
= 50°C)
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, T
C
= 110°C, Gate Open, Exponential Waveform
dV/dt(c)
−
5.0
−
V/ms
V
TM
I
GT
−
−
−
−
V
GT
−
−
−
−
V
GD
0.1
.66
.77
.84
.88
−
2.0
2.0
2.0
2.5
−
V
−
−
−
−
5.0
5.0
5.0
7.0
V
−
−
1.9
V
mA
I
DRM
, I
RRM
T
J
= 25°C
T
J
= +110°C
−
−
−
−
10
100
mA
mA
Symbol
Min
Typ
Max
Unit
I
H
t
gt
−
−
1.5
2.0
10
−
mA
ms
dv/dt
−
25
−
V/ms
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
