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LM385Z-2.5RP 参数 Datasheet PDF下载

LM385Z-2.5RP图片预览
型号: LM385Z-2.5RP
PDF下载: 下载PDF文件 查看货源
内容描述: 微功耗电压基准二极管 [Micropower Voltage Reference Diodes]
分类和应用: 电源电路参考电压源二极管
文件页数/大小: 9 页 / 102 K
品牌: ONSEMI [ ONSEMI ]
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LM285, LM385B  
MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
A
Rating  
Symbol  
Value  
30  
Unit  
mA  
mA  
°C  
Reverse Current  
Forward Current  
I
R
I
F
10  
Operating Ambient Temperature Range  
T
A
LM285  
LM385  
-40 to +85  
0 to +70  
Operating Junction Temperature  
Storage Temperature Range  
T
+150  
°C  
°C  
V
J
T
stg  
-65 to + 150  
Electrostatic Discharge Sensitivity (ESD)  
Human Body Model (HBM)  
Machine Model (MM)  
ESD  
4000  
400  
2000  
Charged Device Model (CDM)  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
LM285-1.2  
Typ  
LM385-1.2/LM385B-1.2  
Min  
Max  
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
Reverse Breakdown Voltage (I  
LM285-1.2/LM385B-1.2  
v I v 20 mA)  
V
(BR)R  
V
Rmin  
R
1.223  
1.200  
1.235  
-
1.247  
1.270  
1.223  
1.210  
1.235  
-
1.247  
1.260  
T = T  
A
to T  
(Note 1)  
low  
LM385-1.2  
T = T  
high  
high  
-
-
-
-
-
-
1.205  
1.192  
1.235  
-
1.260  
1.273  
to T  
(Note 1)  
A
low  
Minimum Operating Current  
T = 25°C  
I
mA  
Rmin  
-
-
8.0  
-
8.0  
-
A
T = T  
10  
20  
15  
20  
to T  
(Note 1)  
A
low  
high  
-
Reverse Breakdown Voltage Change with Current  
v I v 1.0 mA, T = +25°C  
DV  
mV  
(BR)R  
I
-
-
-
-
-
-
-
-
1.0  
1.5  
10  
-
-
-
-
-
-
-
-
1.0  
1.5  
20  
Rmin  
T = T  
R
A
to T (Note 1)  
A
low  
high  
1.0 mA v I v 20 mA, T = +25°C  
R
A
to T (Note 1)  
20  
25  
T = T  
A
low  
high  
Reverse Dynamic Impedance  
= 100 mA, T = +25°C  
Z
W
ppm/°C  
mV  
-
-
0.6  
80  
-
-
-
-
0.6  
80  
-
-
I
R
A
Average Temperature Coefficient  
10 mA v I v 20 mA, T = T  
DV  
/DT  
(BR)  
to T  
(Note 1)  
R
A
low  
high  
Wideband Noise (RMS)  
= 100 mA, 10 Hz v f v 10 kHz  
n
I
R
-
-
60  
20  
-
-
-
-
60  
20  
-
-
Long Term Stability  
= 100 mA, T = +25°C 0.1°C  
S
ppm/kHR  
V
I
R
A
Reverse Breakdown Voltage (I  
LM285-2.5/LM385B-2.5  
v I v 20 mA)  
V
(BR)R  
Rmin  
R
2.462  
2.415  
2.5  
-
2.538  
2.585  
2.462  
2.436  
2.5  
-
2.538  
2.564  
T = T  
A
to T  
(Note 1)  
low  
high  
LM385-2.5  
T = T to T  
-
-
-
-
-
-
2.425  
2.400  
2.5  
-
2.575  
2.600  
(Note 1)  
A
low  
high  
Minimum Operating Current  
T = 25°C  
I
mA  
Rmin  
-
-
13  
-
20  
30  
-
-
13  
-
20  
30  
A
T = T  
to T  
(Note 1)  
A
low  
high  
1. T  
= -40°C for LM285-1.2, LM285-2.5  
=ꢁ+85°C for LM285-1.2, LM285-2.5  
= 0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5  
=ꢁ+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5  
low  
T
T
T
high  
low  
high  
http://onsemi.com  
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