Typical Characteristics TJ = 25°C unless otherwise noted
5
2000
1000
I
D
= -1A
4
3
2
1
0
V
= -5V
DD
C
iss
V
= -10V
DD
V
= -15V
DD
C
oss
f = 1MHz
= 0V
100
50
C
rss
V
GS
0
2
4
6
8
10
12
0.1
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
4.0
3.5
30
10
V
GS
= -4.5V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100us
1ms
1
0.1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
V
= - 2.5V
GS
100ms
1s
10s
DC
SINGLE PULSE
T
= MAX RATED
J
RꢂJA = 133oC/W
R
= 65oC/W
ꢂJA
T
= 25OC
A
0.01
80
0.1
1
10
25
50
75
100
125
150
TA, CASE TEMPERATURE (oC)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure9. Maximum Continuous Drain
Current vs Ambient Temperature
Figure10. Forward Bias Safe
Operating Area
50
VGS = -10V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
10
CURRENT AS FOLLOWS:
150 – T
A
I = I
-----------------------
25
125
o
T
= 25 C
A
1
SINGLE PULSE
0.5
10-3
10-2
10-1
100
t, PULSE WIDTH (s)
101
102
103
Figure 11. Single Pulse Maximum Power Dissipation
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4
FDZ191P Rev.F5 (W)
ONSEMI [ ONSEMI ]
