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FDZ191P 参数 Datasheet PDF下载

FDZ191P图片预览
型号: FDZ191P
PDF下载: 下载PDF文件 查看货源
内容描述: [P 沟道,1.5V 指定,PowerTrench® WL-CSP MOSFET,-20V,-1A,85mΩ]
分类和应用: 开关晶体管
文件页数/大小: 9 页 / 433 K
品牌: ONSEMI [ ONSEMI ]
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Typical Characteristics TJ = 25°C unless otherwise noted  
16  
14  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
PULSE DURATION = 300s  
DUTY CYCLE = 2.0%MAX  
VGS = -1.5V  
12  
10  
8
V
= -2.0V  
GS  
VGS = -2.0V  
V
= -4.5V  
GS  
VGS = -2.5V  
VGS = -3.5V  
V
= -3.5V  
= -2.5V  
GS  
V
GS  
6
V
= -1.5V  
3.5  
4
GS  
PULSE DURATION = 300s  
DUTY CYCLE = 2.0%MAX  
2
VGS = -4.5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
4.0  
0
2
4
6
8
10  
12  
14  
16  
-V , DRAIN TO SOURCE VOLTAGE (V)  
-ID, DRAIN CURRENT(A)  
DS  
Figure 1. On Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
1.5  
240  
200  
160  
120  
80  
ID = -1A  
VGS = -4.5V  
PULSE DURATION = 300s  
I
= - 0.5A  
D
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
DUTY CYCLE = 2.0%MAX  
T
J
= 125oC  
T
J
= 25oC  
2
40  
-50 -25  
0
25  
50  
75  
100 125 150  
1
3
4
5
TJ, JUNCTION TEMPERATURE (oC)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. Normalized On Resistance  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
15  
60  
10  
V
= 0V  
PULSE DURATION = 300s  
GS  
DUTY CYCLE = 2.0%MAX  
12  
9
V
DD  
= -5V  
1
0.1  
T
J
= 125oC  
T
J
= 25oC  
6
0.01  
1E-3  
1E-4  
T
= 125oC  
J
T
= 25oC  
= -55oC  
0.8  
J
3
T
J
T
= -55oC  
J
0
0.0  
0.2  
0.4  
0.6  
1.0  
1.2  
1.4  
0.5  
1.0  
1.5  
2.0  
2.5  
V
, BODY DIODE FORWARD VOLTAGE (V)  
SD  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
www.fairchildsemi.com  
3
FDZ191P Rev.F5 (W)  
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