Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250ꢃA, VGS = 0V
-20
V
ꢄBVDSS
ꢀꢀꢀꢄTJ
IDSS
IGSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D = -250ꢃA, referenced to 25°C
VDS = -16V, VGS = 0V
VGS 8V, VDS = 0V
-12
mV/°C
-1
100
ꢃA
nA
=
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250ꢃA
D = -250ꢃA, referenced to 25°C
VGS = -4.5V, ID = -1A
GS = -2.5V, ID = -1A
-0.4
-10
-0.6
2
-1.5
V
ꢀꢄVGS(th)
ꢀꢀꢀꢄTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
mV/°C
67
85
140
87
85
V
123
200
123
rDS(on)
Drain to Source On Resistance
mꢁ
VGS = -1.5V, ID = -1A
VGS = -4.5V, ID = -1A TJ = 125°C
VGS = -4.5V, VDS = -5V
VDS = -5V, ID = -1A
ID(on)
gFS
On to State Drain Current
Forward Transconductance
A
S
7
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
800
155
90
pF
pF
pF
ꢁ
VDS = -10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
11
10
50
30
9
20
20
80
48
13
ns
ns
ns
VDD = -10V, ID = -1A
V
GS = -4.5V, RGEN = 6ꢁ
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
nC
nC
nC
VDD = -10V
ID = -1A
1
2
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Source Diode Forward Current
-1.1
-1.2
A
V
ns
nC
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -1.1A (Note 2)
-0.7
21
5
IF = -1A, di/dt = 100A/ꢃs
Qrr
Reverse Recovery Charge
Notes:
2
1:
R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
ꢂJA
side of the solder ball, R
is defined for reference. For R
the thermal reference point for the case is defined as the top surface of the copper chip carrier. R
and R
ꢂJB
ꢂJC
ꢂJC ꢂJB
are guaranteed by design while R
is determined by the user's board design.
ꢂJA
b. 133°C/W when mounted on a
minimum pad of 2 oz copper
a. 65°C/W when mounted on
2
a 1 in pad of 2 oz copper,1.5”
X 1.5” X 0.062” thick PCB
2: Pulse Test: Pulse Width < 300ꢃs, Duty cycle < 2.0%.
www.fairchildsemi.com
2
FDZ191P Rev.F5 (W)
ONSEMI [ ONSEMI ]
