December 2014
FDZ191P
ꢀ
P-Channel 1.5V PowerTrench® WL-CSP MOSFETꢀ
-20V, -1A, 85mꢁ
Features
General Description
Designed on Fairchild's advanced 1.5V PowerTrench process
with state of the art "low pitch" WLCSP packaging process, the
FDZ191P minimizes both PCB space and rDS(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
Max rDS(on) = 85mꢁ at VGS = -4.5V, ID = -1A
Max rDS(on) = 123mꢁ at VGS = -2.5V, ID = -1A
Max rDS(on) = 200mꢁ at VGS = -1.5V, ID = -1A
Occupies only 1.5 mm2 of PCB area Less than 50% of the
area of 2 x 2 BGA
gate charge, and low rDS(on)
.
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
Application
Battery management
RoHS Compliant
Load switch
Battery protection
S
D
PIN 1
PIN 1
S
G
S
G
S
D
D
BOTTOM
TOP
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Ratings
-20
8
-3
-15
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
A
Power Dissipation
Power Dissipation
(Note 1a)
(Note 1b)
1.9
0.9
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RꢂJA
RꢂJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
65
°C/W
133
Package Marking and Ordering Information
Device Marking
Device
FDZ191P
Package
WL-CSP
Reel Size
7’’
Tape Width
Quantity
5000 units
1
8mm
1
©2009 Fairchild Semiconductor Corporation
FDZ191P Rev.F5 (W)
www.fairchildsemi.com
ONSEMI [ ONSEMI ]
