FDMQ8205
ABSOLUTE MAXIMUM RATINGS
Min
−
Max
80
Unit
V
INPUT1, INPUT2 to OUTN
OUTP to INPUT1, INPUT2
INPUT1 to INPUT2
−
80
V
−
80
V
INPUT2 to INPUT1
−
80
V
OUTP to OUTN
−
80
V
G1, G2, G3, G4 to OUTN
OUTP to G1, G2, G3, G4
VG_TRANSIENT
−
70
V
−
70
V
Transient Gate Voltage, Pulse Width < 200 ms,
Duty Cycle < 0.003%
−
100
V
Continuous I
(GreenBridge Current,
T = 25°C (Note 2a)
−
−
−
−
−
−
3.0
1.7
58
A
A
INPUT
A
Q1 + Q3 or Q2 + Q4)
T = 25°C (Note 2b)
A
Pulsed I (Q1 + Q3 or Q2 + Q4)
Pulse Width < 300 ms, Duty Cycle < 2% (Note 3)
A
INPUT
P
D
(Power Dissipation, Q1 + Q3 or Q2 + Q4)
T = 25°C (Note 2a)
A
2.5
0.78
150
W
W
°C
T = 25°C (Note 2b)
A
Max Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2
2. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
2
a. 50°C/W when mounted on a 1 in pad of
2 oz copper, the board designed Q1 + Q3
or Q2 + Q4.
b. 160°C/W when mounted on a minimum
pad of 2 oz copper, the board designed
Q1 + Q3 or Q2 + Q4.
3. Pulse Id measured at td ≤ 300 ms, refer to SOA graph for more details.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Min
−
Typ
5.1
50
Max
−
Unit
°C/W
R
q
JC
R
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2b)
−
−
q
JA
R
−
160
−
q
JA
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