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ESDR0502BT1G 参数 Datasheet PDF下载

ESDR0502BT1G图片预览
型号: ESDR0502BT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 瞬态电压抑制器ESD保护二极管具有超低电容 [Transient Voltage Suppressor ESD Protection Diodes with Ultra−Low Capacitance]
分类和应用: 瞬态抑制器二极管光电二极管局域网
文件页数/大小: 4 页 / 124 K
品牌: ONSEMI [ ONSEMI ]
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ESDR0502B  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
I
Symbol  
Parameter  
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
I
F
I
PP  
V
C
PP  
V
RWM  
Working Peak Reverse Voltage  
V
C
V
V
BR RWM  
I
Maximum Reverse Leakage Current @ V  
V
R
RWM  
I
V
F
R
T
I
V
BR  
Breakdown Voltage @ I  
Test Current  
T
I
T
I
F
Forward Current  
I
PP  
V
F
Forward Voltage @ I  
F
P
Peak Power Dissipation  
Capacitance @ V = 0 and f = 1.0 MHz  
pk  
UniDirectional TVS  
C
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.1 V Max. @ I = 10 mA for all types)  
A
F
F
V
(V)  
C (pF),  
unidirectional  
(Note 3)  
C (pF),  
bidirectional  
(Note 4)  
V (V)  
C
BR  
V
I
(mA)  
@ I  
@ I = 1 A  
RWM  
(V)  
R
T
PP  
@ V  
(Note 2)  
(Note 5)  
I
T
V
C
RWM  
Per  
IEC61000−  
42  
Device  
Max  
Max  
1.0  
Min  
mA  
Typ  
Max  
Typ  
Max  
Max  
(Note 6)  
Marking  
Device  
ESDR0502B  
AD  
5.0  
5.8  
1.0  
0.5  
0.9  
0.25  
0.45  
15  
Figures 1  
and 2  
2. V is measured with a pulse test current I at an ambient temperature of 25°C.  
BR  
T
3. Unidirectional capacitance at f = 1 MHz, V = 0 V, T = 25°C (pin1 to pin 3; pin 2 to pin 3).  
R
A
4. Bidirectional capacitance at f = 1 MHz, V = 0 V, T = 25°C (pin1 to pin 2).  
R
A
5. Surge current waveform per Figure 5.  
6. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.  
Figure 2. ESD Clamping Voltage Screenshot  
Figure 1. ESD Clamping Voltage Screenshot  
Negative 8 kV contact per IEC 6100042  
Positive 8 kV contact per IEC 6100042  
http://onsemi.com  
2
 
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