DAN222
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT–416/SC–90 package which is designed
for low power surface mount applications, where board space is at a
premium.
http://onsemi.com
•
Fast t
rr
•
Low C
D
•
Available in 8 mm Tape and Reel
SOT–416/SC–90 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODE
SURFACE MOUNT
CATHODE
3
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
(1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
mAdc
mAdc
Adc
1
2
ANODE
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature Range
1. t = 1
µS
Symbol
P
D
T
J
T
stg
Max
150
150
– 55 to +150
Unit
mW
°C
°C
1
3
2
SOT–416
CASE 463
STYLE 3
DEVICE MARKING
N9
ORDERING INFORMATION
Device
DAN222
Package
SOT–416
Shipping
3000/Tape & Reel
©
Semiconductor Components Industries, LLC, 2000
1
March, 2000 – Rev. 2
Publication Order Number:
DAN222/D
ONSEMI [ ON SEMICONDUCTOR ]
