ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
200
—
—
—
—
—
—
Vdc
µAdc
µAdc
mAdc
CEO(sus)
(I = 100 mAdc, I = 0)
C
B
Collector Cutoff Current
(V = Rated V , V
I
I
100
100
3.0
CES
CEV
EBO
= 0)
CE CBO BE
Collector Cutoff Current
(V = Rated V , V
—
= 6.0 Vdc)
CE CEV BE(off)
Emitter Cutoff Current
(V = 6.0 Vdc, I = 0)
I
—
EB
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(I = 5.0 Adc, I = 50 mAdc)
C
V
—
—
—
—
—
—
1.5
2.4
2.0
Vdc
Vdc
Vdc
CE(sat)
C
B
Base–Emitter Saturation Voltage
(I = 5.0 Adc, I = 50 mAdc)
V
BE(sat)
C
B
Emitter–Collector Diode Forward Voltage
(I = 4.0 Adc)
F
V
F
SWITCHING CHARACTERISTICS
Turn–On Time
t
—
—
—
—
0.35
0.55
0.20
0.40
—
—
µs
µs
µs
µs
on
(Resistive Load, V
= 100 Vdc,
= 5.0 Adc, I = 50 mAdc,
CC
Storage Time
Fall Time
t
s
I
C
B1
= 500 mAdc)
I
B2
t
f
—
Crossover Time
t
c
1.0
(I = 5.0 Adc, I = 50 mAdc, V
= 4.0 Vdc,
C
clamp
B1
BE(off)
V
= 200 Vdc, L = 500 µH)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
1%.
600
400
20
10
non–repetitive
5.0 ms
V
T
= 5.0 V
= 25°C
CE
J
10 µs
1.0 ms
300
200
dc
1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
100
80
0.1
0
60
50 ms
BU806
40
30
T
= 25°C
C
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
3.0
10
60
100
200 300
I
, COLLECTOR CURRENT (AMPS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
CE
Figure 1. DC Current Gain
Figure 2. Safe Operating Area (FBSOA)
2
Motorola Bipolar Power Transistor Device Data
ONSEMI [ ONSEMI ]
