BSS84LT1
Power MOSFET
130 mA, 50 V
P−Channel SOT−23
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are DC−DC converters,
load switching, power management in portable and battery−powered
products such as computers, printers, cellular and cordless telephones.
Features
http://onsemi.com
130 mA, 50 V R
DS(on)
= 10
W
P−Channel
3
•
Energy Efficient
•
Miniature SOT−23 Surface Mount Package Saves Board Space
•
Pb−Free Package is Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature
Range
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJA
T
L
Value
50
±
20
130
520
225
− 55 to
150
556
260
mW
°C
°C/W
°C
1
1
Unit
Vdc
Vdc
mA
3
2
SOT−23
CASE 318
STYLE 21
2
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD
M
= Device Code
= Date Code
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
PDM
2
Gate
Source
ORDERING INFORMATION
Device
BSS84LT1
BSS84LT1G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 5
Publication Order Number:
BSS84LT1/D