BSS138LT1
Preferred Device
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
http://onsemi.com
•
Pb−Free Packages are Available
•
Low Threshold Voltage (V
GS(th)
: 0.5 V−1.5 V) Makes it Ideal for
Low Voltage Applications
•
Miniature SOT−23 Surface Mount Package Saves Board Space
200 mA, 50 V
R
DS(on)
= 3.5
W
N−Channel
3
1
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature
Range
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJA
T
L
Value
50
±
20
200
800
225
− 55 to
150
556
260
mW
°C
°C/W
°C
J1
M
= Device Code
= Date Code
1
Unit
Vdc
Vdc
mA
1
2
3
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
J1M
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
2
Gate
Source
ORDERING INFORMATION
Device
BSS138LT1
BSS138LT1G
BSS138LT3
BSS138LT3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
10,000 Tape & Reel
10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 3
Publication Order Number:
BSS138LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
