BSS123LT1
Preferred Device
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features
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170 mAMPS
100 VOLTS
R
DS(on)
= 6
W
N−Channel
3
Symbol
V
DSS
V
GS
V
GSM
I
D
I
DM
Value
100
±
20
±
40
0.17
0.68
Unit
Vdc
1
Vdc
Vpk
Adc
2
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
50
ms)
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
SA
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 3) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
R
qJA
T
J
, T
stg
Max
225
1.8
556
−55 to +150
Unit
mW
mW/°C
°C/W
°C
1
2
SA
M
= Device Code
= Date Code
PIN ASSIGNMENT
Drain
3
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
3. FR−5 = 1.0
0.75
0.062 in.
1
2
Gate
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
March, 2005 − Rev. 5
Publication Order Number:
BSS123LT1/D
M
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
3
SOT−23
CASE 318
STYLE 21
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