BDX53B BDX53C BDX54B BDX54C
NPN
BDX53B, 53C
20,000
VCE = 4.0 V
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
– 55°C
500
300
200
0.1
TJ = 150°C
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
500
300
200
0.1
– 55°C
25°C
TJ = 150°C
20,000
VCE = 4.0 V
PNP
BDX54B, 54C
25°C
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
Figure 8. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
TJ = 25°C
2.6
IC = 2.0 A
2.2
4.0 A
6.0 A
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
TJ = 25°C
2.6
IC = 2.0 A
2.2
4.0 A
6.0 A
1.8
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
Figure 9. Collector Saturation Region
3.0
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
3.0
TJ = 25°C
2.5
2.0
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
2.0
1.5
1.5
VBE @ VCE = 4.0 V
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
1.0
1.0
0.5
0.1
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
ONSEMI [ ON SEMICONDUCTOR ]
