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BDX53CBD 参数 Datasheet PDF下载

BDX53CBD图片预览
型号: BDX53CBD
PDF下载: 下载PDF文件 查看货源
内容描述: [TRANSISTOR 8 A, 100 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power]
分类和应用: 局域网放大器晶体管
文件页数/大小: 7 页 / 143 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号BDX53CBD的Datasheet PDF文件第1页浏览型号BDX53CBD的Datasheet PDF文件第2页浏览型号BDX53CBD的Datasheet PDF文件第4页浏览型号BDX53CBD的Datasheet PDF文件第5页浏览型号BDX53CBD的Datasheet PDF文件第6页浏览型号BDX53CBD的Datasheet PDF文件第7页  
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)  
V
CC  
-30 V  
5.0  
R
AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS  
C
D MUST BE FAST RECOVERY TYPES, e.g.:  
B
t
s
3.0  
2.0  
1
ꢂ1N5825 USED ABOVE I [ 100 mA  
B
R
C
ꢂMSD6100 USED BELOW I [ 100 mA  
B
SCOPE  
t
f
TUT  
1.0  
0.7  
0.5  
R
B
V
2
APPROX  
+8.0 V  
D
51  
1
[ 8.0 k  
[ 120  
0.3  
0.2  
0
t
r
V
= 30 V  
I /I = 250  
CC  
V
+4.0 V  
1
C B  
APPROX  
-12 V  
25 ms  
0.1  
0.07  
0.05  
I
= I  
B1 B2  
for t and t , D is disconnected  
d
r
1
T = 25°C  
t @ V  
d
= 0 V  
J
BE(off)  
and V = 0  
2
t , t v 10 ns  
r
f
DUTY CYCLE = 1.0%  
For NPN test circuit reverse all polarities  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
I , COLLECTOR CURRENT (AMP)  
C
Figure 2. Switching Time Test Circuit  
Figure 3. Switching Times  
1.0  
0.7  
0.5  
D = 0.5  
0.2  
0.3  
0.2  
0.1  
P
(pk)  
0.05  
0.02  
0.1  
0.07  
0.05  
R
R
(t) = r(t) R  
q
JC  
q
q
JC  
JC  
= 1.92°C/W  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t  
t
1
SINGLE  
PULSE  
0.03  
0.02  
t
2
SINGLE PULSE  
0.01  
1
T
- T = P  
C
R (t)  
q
JC  
J(pk)  
(pk)  
DUTY CYCLE, D = t /t  
1 2  
0.01  
0.01 0.02 0.03 0.05  
0.1  
0.2 0.3 0.5  
1.0  
2.0 3.0 5.0  
10  
20 30  
50  
100  
200 300 500  
1000  
t, TIME OR PULSE WIDTH (ms)  
Figure 4. Thermal Response  
20  
There are two limitations on the power handling ability of  
a transistor average junction temperature and second  
100 ms  
500 ms  
10  
breakdown. Safe operating area curves indicate I V  
C
CE  
5.0  
5.0 ms  
1.0 ms  
limits of the transistor that must be observed for reliable  
operation, i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
dc  
2.0  
1.0  
0.5  
T = 150°C  
J
BONDING WIRE LIMITED  
THERMALLY LIMITED @ T = 25°C  
ꢂ(SINGLE PULSE)  
SECOND BREAKDOWN LIMITED  
The data of Figure 5 is based on T  
= 150°C; T is  
C
J(pk)  
C
variable depending on conditions. Second breakdown pulse  
limits are valid for duty cycles to 10% provided  
0.2  
0.1  
CURVES APPLY BELOW RATED V  
CEO  
T
t 150°C. T  
may be calculated from the data in  
J(pk)  
J(pk)  
Figure 4. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
0.05  
BDX53B, BDX54B  
BDX53C, BDX54C  
0.02  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
V
CE  
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 5. ActiveRegion Safe Operating Area  
http://onsemi.com  
3