BD237
10
IC, COLLECTOR CURRENT (AMP)
100
µs
1 ms
5 ms
1
TJ = 150°C
dc
3
0.3
BD236
BD237
3
10
30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
0.1
1
100
Figure 1. Active Region Safe Operating Area
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.8
IC = 0.1 A
0.25 A
0.5 A
1.0 A
0.6
TJ = 25°C
0.4
0.2
0
0.2
0.3
0.5
1.0
2.0
3.0
10
5.0
IB, BASE CURRENT (mA)
1.5
20
30
50
100
200
Figure 2. Collector Saturation Region
hFE , DC CURRENT GAIN (NORMALIZED)
1000
700
500
300
200
100
70
50
30
20
10
2.0 3.0 5.0
TJ = + 150°C
TJ = + 25°C
TJ = + 55°C
VOLTAGE (VOLTS)
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
10
20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
0
2.0 3.0 5.0
10
20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
VCE = 2.0 V
TJ = 25°C
1.2
Figure 3. Current Gain
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.01
SINGLE PULSE
Figure 4. “On” Voltages
θ
JC(t) = r(t)
θ
JC
P(pk)
θ
JC = 4.16°C/W MAX
θ
JC = 3.5°C/W TYP
D CURVES APPLY FOR POWER
t1
PULSE TRAIN SHOWN
t2
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
DUTY CYCLE, D = t1/t2
20
30
50
100
200 300
500
1000
1.0
2.0 3.0 5.0
10
t, TIME or PULSE WIDTH (ms)
Figure 5. Thermal Response
2
Motorola Bipolar Power Transistor Device Data
ONSEMI [ ON SEMICONDUCTOR ]
