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BC846B 参数 Datasheet PDF下载

BC846B图片预览
型号: BC846B
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( NPN硅) [General Purpose Transistors(NPN Silicon)]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 6 页 / 96 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BC846ALT1 Series
BC846
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 5 V
T
A
= 25°C
2.0
1.0
0.5
0.2
0.1 0.2
10
100
1.0
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
A
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.5
50
10 20
5.0
1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
100
200
V
BE
@ V
CE
= 5.0 V
Figure 7. DC Current Gain
2.0
T
A
= 25°C
1.6
20 mA
1.2
0.8
0.4
0
I
C
=
10 mA
50 mA
100 mA
200 mA
−1.0
−1.4
−1.8
Figure 8. “On” Voltage
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
q
VB
for V
BE
−2.2
−2.6
−3.0
−55°C to 125°C
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
0.2
0.5
50
10 20
5.0
1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
100
200
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
f T, CURRENT−GAIN − BANDWIDTH PRODUCT
40
500
200
100
50
20
V
CE
= 5 V
T
A
= 25°C
10
6.0
4.0
C
ob
2.0
0.1
0.2
1.0 2.0
10 20
0.5
5.0
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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