BC817−16LT1, BC817−25LT1, BC817−40LT1
1000
V
CE
= 1 V
T
J
= 25°C
hFE, DC CURRENT GAIN
100
10
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 1. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.01
I
C
= 10 mA
100 mA
300 mA
500 mA
1.0
T
A
= 25°C
0.8
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.1
1
I
B
, BASE CURRENT (mA)
10
100
0
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1 V
Figure 2. Saturation Region
Figure 3. “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+1
q
VC
for V
CE(sat)
C, CAPACITANCE (pF)
100
0
C
ib
10
−1
−2
q
VB
for V
BE
C
ob
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
1
0.1
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 4. Temperature Coefficients
Figure 5. Capacitances
http://onsemi.com
3
ONSEMI [ ON SEMICONDUCTOR ]
