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BC817-40L 参数 Datasheet PDF下载

BC817-40L图片预览
型号: BC817-40L
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管NPN硅集电极的????发射极电压VCEO 45 [General Purpose Transistors NPN Silicon Collector − Emitter Voltage VCEO 45]
分类和应用: 晶体晶体管
文件页数/大小: 13 页 / 178 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BC846ALT1G Series, SBC846ALT1G Series
BC846B, SBC846B
600
500
400
300
200
100
0
−55°C
150°C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
0.30
I
C
/I
B
= 20
0.25
0.20
25°C
0.15
0.10
−55°C
0.05
0
150°C
h
FE
, DC CURRENT GAIN
25°C
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
/I
B
= 20
−55°C
25°C
150°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
http://onsemi.com
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