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BC807-40LT1 参数 Datasheet PDF下载

BC807-40LT1图片预览
型号: BC807-40LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( PNP硅) [General Purpose Transistors(PNP Silicon)]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 4 页 / 63 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号BC807-40LT1的Datasheet PDF文件第2页浏览型号BC807-40LT1的Datasheet PDF文件第3页浏览型号BC807-40LT1的Datasheet PDF文件第4页  
BC807−16LT1,
BC807−25LT1, BC807−40LT1
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
COLLECTOR
3
1
BASE
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−50
−5.0
−500
Unit
V
V
V
mAdc
3
1
2
SOT−23
CASE 318
STYLE 6
1
xxx
= 5A (BC807−16LT1)
5B1 (BC807−25LT1)
5C (BC807−40LT1)
= Date Code
2
EMITTER
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current − Continuous
MARKING
DIAGRAM
3
xxxD
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
D
Max
Unit
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 5
Publication Order Number:
BC807−16LT1/D