ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 100 mA, V
C
h
FE
—
= 1.0 V)
BC337/BC338
100
100
160
250
60
—
—
—
—
—
630
250
400
630
—
CE
BC337–16/BC338–16
BC337–25/BC338–25
BC337–40/BC338–40
(I = 300 mA, V
C
= 1.0 V)
CE
Base–Emitter On Voltage
(I = 300 mA, V = 1.0 V)
V
—
—
1.2
Vdc
Vdc
BE(on)
C
CE
Collector–Emitter Saturation Voltage
(I = 500 mA, I = 50 mA)
V
—
—
0.7
CE(sat)
C
B
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
C
f
—
—
15
—
—
pF
ob
(V
CB
= 10 V, I = 0, f = 1.0 MHz)
E
Current–Gain — Bandwidth Product
210
MHz
T
(I = 10 mA, V
C
= 5.0 V, f = 100 MHz)
CE
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
θ
θ
θ
θ
(t) = (t) θ
JC
JC
JA
JA
JC
0.05
0.02
0.1
= 100
°C/W MAX
P
(pk)
0.07
0.05
(t) = r(t)
= 375
θ
JA
°C/W MAX
SINGLE PULSE
SINGLE PULSE
t
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
0.03
0.02
t
2
DUTY CYCLE, D = t /t
1 2
1
T
– T = P
C
θ
(t)
J(pk)
10
(pk) JC
0.01
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
t, TIME (SECONDS)
Figure 1. Thermal Response
1000
100
10
1000
1.0 s
1.0 ms
T
= 135°C
J
V
T
= 1 V
CE
= 25
°C
100 µs
J
dc
T
= 25°C
C
dc
= 25°C
100
T
A
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED V
)
CEO
10
, COLLECTOR–EMITTER VOLTAGE
10
0.1
1.0
3.0
30
100
1.0
10
100
1000
V
I , COLLECTOR CURRENT (AMP)
C
CE
Figure 2. Active Region — Safe Operating Area
Figure 3. DC Current Gain
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ONSEMI ]
