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BAV99LT1G 参数 Datasheet PDF下载

BAV99LT1G图片预览
型号: BAV99LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 单片双开关二极管 [Monolithic Dual Switching Diode]
分类和应用: 整流二极管开关光电二极管
文件页数/大小: 4 页 / 47 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BAV99LT1
OFF CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Reverse Breakdown Voltage,
(I
(BR)
= 100
mA)
Reverse Voltage Leakage Current,
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance,
(V
R
= 0, f = 1.0 MHz)
Forward Voltage,
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time,
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc) R
L
= 100
W
Forward Recovery Voltage,
(I
F
= 10 mA, t
r
= 20 ns)
V
FR
1.75
V
t
rr
6.0
ns
V
F
715
855
1000
1250
mVdc
C
D
1.5
pF
V
(BR)
I
R
70
2.5
30
50
Vdc
mAdc
Symbol
Min
Max
Unit
http://onsemi.com
2