BAV99WT1 BAV99RWT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100
µA)
Reverse Voltage Leakage Current (VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
V(BR)
IR
70
—
—
—
—
—
—
—
—
—
—
—
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Vdc
m
Adc
pF
mVdc
CD
VF
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100
W
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
trr
VFR
ns
V
820
Ω
+10 V
2k
100
µH
0.1
µF
DUT
50
Ω
OUTPUT
PULSE
GENERATOR
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
90%
VR
INPUT SIGNAL
IR
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
0.1
µF
tr
10%
tp
t
IF
trr
t
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ON SEMICONDUCTOR ]
