BAV70LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Reverse Breakdown Voltage
(I
(BR)
= 100
mA)
Reverse Voltage Leakage Current (Note 3)
(V
R
= 25 V, T
J
= 150°C)
(V
R
= 70 V)
(V
R
= 70 V, T
J
= 150°C)
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA) (Figure 1)
R
L
= 100
W
Symbol
V
(BR)
I
R
Min
70
Max
−
Unit
V
mA
−
−
−
−
60
2.5
100
1.5
C
D
V
F
pF
mV
−
−
−
−
−
715
855
1000
1250
6.0
ns
t
rr
3. For each individual diode while second diode is unbiased.
820
W
+10 V
2.0 k
100
mH
0.1
mF
D.U.T.
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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