BAT54HT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
http://onsemi.com
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•
•
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Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ I
F
= 10 mAdc
Device Marking: JV
Pb−Free Package is Available
30 VOLT SILICON
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
1
CATHODE
Unit
V
2
2
ANODE
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Symbol
V
R
Value
30
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
200
1.57
R
qJA
T
J
, T
stg
635
−55
to150
Unit
mW
mW/°C
°C/W
°C
1
SOD−323
CASE 477
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad
1
JVM
G
G
2
JV
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BAT54HT1
BAT54HT1G
Package
SOD−323
SOD−323
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 3
Publication Order Number:
BAT54HT1/D
ONSEMI [ ON SEMICONDUCTOR ]
