BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Total Device Dissipation FR−5 Board
(Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
Total Device Dissipation Alumina Substrate
(Note 3)
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
−55 to +150
417
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR−5 = 1.0
0.75
0.062 in.
3. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
R
qJA
Max
385
328
3.0
150
−55 to +150
Unit
mW
°C/W
mW/°C
°C
°C
T
Jmax
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Voltage Leakage Current
(V
R
= 100 Vdc)
(V
R
= 150 Vdc)
(V
R
= 200 Vdc)
(V
R
= 100 Vdc, T
J
= 150°C)
(V
R
= 150 Vdc, T
J
= 150°C)
(V
R
= 200 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
mAdc)
(I
BR
= 100
mAdc)
(I
BR
= 100
mAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance (V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time (I
F
= I
R
= 30 mAdc, I
R(REC)
= 3.0 mAdc, R
L
= 100)
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
V
(BR)
BAS19
BAS20
BAS21
V
F
−
−
C
D
t
rr
−
−
1.0
1.25
5.0
50
pF
ns
120
200
250
−
−
−
Vdc
Symbol
I
R
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
Vdc
Min
Max
Unit
mAdc
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