ADM1032
TYPICAL CHARACTERISTICS
20
16
TEMPERATURE ERROR
(5C)
12
TEMPERATURE ERROR
(5C)
8
4
0
−4
−8
D+ TO V
DD
D+ TO GND
1.0
0.5
0
−12
–16
–0.5
0
10
W
LEAKAGE RESISTANCE (M )
100
0
20
40
60
80
100
120
TEMPERATURE
(5C)
Figure 3. Temperature Error vs. Leakage
Resistance
Figure 4. Temperature Error vs. Actual
Temperature Using 2N3906
13
11
TEMPERATURE ERROR
(5C)
9
7
5
V
IN
= 40mV p−p
3
1
V
IN
= 10mV p−p
–1
100k
1M
10M
FREQUENCY (Hz)
100M
TEMPERATURE ERROR
(5C)
12
10
V
IN
= 250mV p−p
8
6
4
V
IN
= 100mV p−p
2
0
10
FREQUENCY (Hz)
1M
Figure 5. Temperature Error vs. Differential Mode
Noise Frequency
18
16
TEMPERATURE ERROR
(5C)
14
12
10
8
6
4
2
0
Figure 6. Temperature Error vs. Power Supply
Noise Frequency
2.0
SUPPLY CURRENT (mA)
1.5
1.0
0.5
V
DD
= 5V
V
DD
= 3V
1
6
11
16
21
CAPACITANCE (nF)
26
31
36
0
0.01
0.1
1
CONVERSION RATE (Hz)
10
100
Figure 7. Temperature Error vs. Capacitance
Between D+ and D−
http://onsemi.com
5
Figure 8. Operating Supply Current vs.
Conversion Rate
ONSEMI [ ON SEMICONDUCTOR ]
