74HCU04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Guaranteed Limit
v
85_C
1.7
2.5
3.6
4.8
0.3
0.5
0.8
1.1
1.8
4.0
5.5
2.26
3.76
5.26
0.2
0.5
0.5
0.32
0.37
0.37
±1.0
20
Symbol
V
IH
Parameter
Test Conditions
V
CC
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
|I
out
|
v
2.4 mA
|I
out
|
v
4.0 mA
|I
out
|
v
5.2 mA
3.0
4.5
6.0
2.0
4.5
6.0
|I
out
|
v
2.4 mA
|I
out
|
v
4.0 mA
|I
out
|
v
5.2 mA
3.0
4.5
6.0
6.0
6.0
– 55 to
25_C
1.7
2.5
3.6
4.8
0.3
0.5
0.8
1.1
1.8
4.0
5.5
2.36
3.86
5.36
0.2
0.5
0.5
0.32
0.32
0.32
±0.1
2.0
v
125_C
l.7
2.5
3.6
4.8
0.3
0.5
0.8
1.1
1.8
4.0
5.5
2.20
3.70
5.20
0.2
0.5
0.5
0.32
0.40
0.40
±1.0
40
mA
mA
V
Unit
V
Minimum High−Level Input
Voltage
V
out
= 0.5 V*
|I
out
|
v
20
mA
V
IL
Maximum Low−Level Input
Voltage
V
out
= V
CC
– 0.5 V*
|I
out
|
v
20
mA
V
V
OH
Minimum High−Level Output
Voltage
V
in
= GND
|I
out
|
v
20
mA
V
in
= GND
V
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
CC
|I
out
|
v
20
mA
V
in
= V
CC
I
in
I
CC
Maximum Input Leakage Current
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
V
in
= V
CC
or GND
I
out
= 0
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. For V
CC
= 2.0 V, V
out
= 0.2 V or V
CC
−
0.2 V.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Guaranteed Limit
v
85_C
90
45
18
15
95
32
19
16
10
Symbol
t
PLH
,
t
PHL
Parameter
V
CC
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
—
– 55 to
25_C
70
40
14
12
75
27
15
13
10
v
125_C
105
50
21
18
110
36
22
19
10
Unit
ns
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 2)
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
ns
C
in
Maximum Input Capacitance
pF
3. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
4. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Per Inverter)*
2
f
15
pF
5. Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
+ I
CC
V
CC
. For load considerations, see Chapter 2 of the
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