74HC132
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6.0 ns)
V
CC
Symbol
t
PLH
,
t
PHL
t
TLH
,
t
THL
C
in
Parameter
Maximum Propagation Delay, Input A or B to Output Y
(Figures 3 and 4)
Maximum Output Transition Time, Any Output
(Figures 3 and 4)
Maximum Input Capacitance
(V)
2.0
4.5
6.0
2.0
4.5
6.0
—
125
25
21
75
15
13
10
Guaranteed Limit
*55_C
to 25_C
v85_C
155
31
26
95
19
16
10
v125_C
190
38
32
110
22
19
10
Unit
ns
ns
pF
9. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (per Gate) (Note 10)
24
pF
10. Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
. For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
t
r
INPUT
A OR B
Y
t
THL
90%
50%
10%
t
PHL
90%
50%
10%
t
f
TEST POINT
V
CC
GND
DEVICE
UNDER
TEST
OUTPUT
C
L
*
t
PLH
t
TLH
*Includes all probe and jig capacitance
Figure 3. Switching Waveforms
Figure 4. Test Circuit
http://onsemi.com
5
ONSEMI [ ON SEMICONDUCTOR ]
