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74HC04DR2G 参数 Datasheet PDF下载

74HC04DR2G图片预览
型号: 74HC04DR2G
PDF下载: 下载PDF文件 查看货源
内容描述: 六反相器高性能硅栅CMOS [Hex Inverter High−Performance Silicon−Gate CMOS]
分类和应用: 栅极触发器逻辑集成电路光电二极管
文件页数/大小: 7 页 / 119 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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74HC04
Hex Inverter
High−Performance Silicon−Gate CMOS
The 74HC04 is identical in pinout to the LS04 and the MC14069.
The device inputs are compatible with Standard CMOS outputs; with
pullup resistors, they are compatible with LSTTL outputs.
The device consists of six three−stage inverters.
Features
http://onsemi.com
MARKING
DIAGRAMS
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0
mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
ESD Performance: HBM
>
2000 V; Machine Model
>
200 V
Chip Complexity: 36 FETs or 9 Equivalent Gates
These are Pb−Free Devices
LOGIC DIAGRAM
A1
1
2
Y1
14
14
1
SOIC−14
D SUFFIX
CASE 751A
1
HC04G
AWLYWW
14
14
1
TSSOP−14
DT SUFFIX
CASE 948G
1
HC
04
ALYW
G
G
A2
3
4
Y2
A3
5
6
Y3
Y=A
A4
9
8
Y4
HC04
= Device Code
A
= Assembly Location
WL or L = Wafer Lot
Y
= Year
WW or W = Work Week
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
A5
11
10
Y5
FUNCTION TABLE
A6
13
12
Y6
Inputs
A
Outputs
Y
H
L
Pinout: 14−Lead Packages
(Top View)
V
CC
14
A6
13
Y6
12
A5
11
Y5
10
A4
9
Y4
8
L
H
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
A1
2
Y1
3
A2
4
Y2
5
A3
6
Y3
7
GND
©
Semiconductor Components Industries, LLC, 2007
March, 2007
Rev. 1
1
Publication Order Number:
74HC04/D