2N7002W
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
60
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
(BR)DSS
71
mV/°C
J
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
mA
nA
DSS
J
V
V
= 0 V,
= 60 V
GS
T = 125°C
J
500
100
DS
V
= 0 V,
T = 25°C
J
GS
V
= 50 V
DS
Gate−to−Source Leakage Current
I
V
= 0 V, V = ±20 V
±10
450
150
mA
nA
nA
GSS
DS
DS
DS
GS
V
= 0 V, V = ±10 V
GS
V
= 0 V, V = ±5.0 V
GS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
= V , I = 250 mA
1.0
2.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
GS(TH)
4.0
mV/°C
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 500 mA
1.19
1.33
80
1.6
2.5
W
DS(on)
GS
D
V
= 4.5 V, I = 200 mA
D
GS
Forward Transconductance
g
FS
V
= 5 V, I = 200 mA
S
DS
D
CHARGES AND CAPACITANCES
Input Capacitance
C
24.5
4.2
2.2
0.7
0.1
0.3
0.1
pF
ISS
V
= 0 V, f = 1 MHz,
GS
Output Capacitance
C
OSS
C
RSS
V
= 20 V
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
nC
ns
V
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
= 4.5 V, V = 10 V;
DS
GS
I
= 200 mA
D
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, V = V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
12.2
9.0
d(ON)
t
r
V
I
= 10 V, V = 25 V,
DD
GS
= 500 mA, R = 25 W
Turn−Off Delay Time
Fall Time
t
55.8
29
D
G
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
J
0.8
0.7
1.2
SD
V
= 0 V,
= 200 mA
GS
I
T = 85°C
J
S
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2
ONSEMI [ ONSEMI ]
