2N5550, 2N5551
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0 )
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
h
FE
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
V
CE(sat)
Both Types
2N5550
2N5551
V
BE(sat)
Both Types
2N5550
2N5551
−
−
−
1.0
1.2
1.0
−
−
−
0.15
0.25
0.20
Vdc
60
80
60
80
20
30
−
−
250
250
−
−
Vdc
−
2N5550
2N5551
2N5550
2N5551
I
EBO
V
(BR)CEO
2N5550
2N5551
V
(BR)CBO
2N5550
2N5551
V
(BR)EBO
I
CBO
−
−
−
−
−
100
50
100
50
50
nAdc
mAdc
nAdc
160
180
6.0
−
−
−
Vdc
140
160
−
−
Vdc
Vdc
Symbol
Min
Max
Unit
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= 250
mAdc,
V
CE
= 5.0 Vdc, R
S
= 1.0 kW,
f = 1.0 kHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
f
T
C
obo
C
ibo
2N5550
2N5551
h
fe
NF
2N5550
2N5551
100
−
300
6.0
MHz
pF
pF
−
−
50
30
20
200
−
dB
−
−
10
8.0
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
