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2N5401 参数 Datasheet PDF下载

2N5401图片预览
型号: 2N5401
PDF下载: 下载PDF文件 查看货源
内容描述: 放大器晶体管PNP硅 [Amplifier Transistors PNP Silicon]
分类和应用: 晶体放大器晶体管
文件页数/大小: 6 页 / 84 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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2N5400, 2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
Watts
mW/°C
°C
12
3
mW
mW/°C
TO−92
CASE 29
STYLE 1
2N5400 2N5401
120
130
5.0
600
150
160
Unit
Vdc
Vdc
Vdc
mAdc
1
EMITTER
2
BASE
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
MARKING DIAGRAM
2N
540x
AYWWG
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 1
Publication Order Number:
2N5400/D