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2N4403 参数 Datasheet PDF下载

2N4403图片预览
型号: 2N4403
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( PNP硅) [General Purpose Transistors(PNP Silicon)]
分类和应用: 晶体晶体管开关
文件页数/大小: 6 页 / 300 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4402/D
General Purpose Transistors
PNP Silicon
2N4402
2N4403*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
40
40
5.0
600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
40
40
5.0
0.1
0.1
Vdc
Vdc
Vdc
µAdc
µAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1