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2N4401 参数 Datasheet PDF下载

2N4401图片预览
型号: 2N4401
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 124 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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2N4401
h PARAMETERS
V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C
This group of graphs illustrates the relationship between
h
fe
and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.
300
hie , INPUT IMPEDANCE (OHMS)
200
hfe , CURRENT GAIN
50 k
20 k
10 k
5.0 k
2N4401 UNIT 1
2N4401 UNIT 2
100
70
50
30
20
2N4401 UNIT 1
2N4401 UNIT 2
2.0 k
1.0 k
500
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Input Impedance
h re , VOLTAGE FEEDBACK RATIO (X 10
−4
)
10
hoe, OUTPUT ADMITTANCE (
m
mhos)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
50
2N4401 UNIT 1
2N4401 UNIT 2
20
10
5.0
2.0
1.0
2N4401 UNIT 1
2N4401 UNIT 2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
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5