2N3906
Preferred Device
General Purpose
Transistors
PNP Silicon
http://onsemi.com
COLLECTOR
3
Symbol
VCEO
VCBO
VEBO
IC
PD
625
5.0
PD
PD
1.5
12
TJ, Tstg
–55 to
+150
Watts
mW/°C
°C
2N
3906
YWW
Unit
°C/W
°C/W
Y
WW
= Year
= Work Week
250
mW
mW/°C
mW
1
2
3
TO–92
CASE 29
STYLE 1
Value
40
40
5.0
200
Unit
Vdc
Vdc
Vdc
mAdc
2
BASE
1
EMITTER
STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Power Dissipation
@ TA = 60°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
(Note 1.)
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
θJA
R
θJC
Max
200
83.3
1. Indicates Data in addition to JEDEC Requirements.
ORDERING INFORMATION
Device
2N3906
2N3906RLRA
2N3906RLRE
2N3906RLRM
2N3906RLRP
2N3906RL1
2N3906ZL1
Package
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
5000 Units/Box
2000/Tape & Reel
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
2000/Tape & Reel
2000/Ammo Pack
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 0
Publication Order Number:
2N3906/D
ONSEMI [ ON SEMICONDUCTOR ]
