2N2907A
Switching Transistor
PNP Silicon Epitaxial
Features
•
MIL−PRF−19500/291 Qualified
•
Available as JAN, JANTX, and JANTXV
•
Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
, T
stg
Value
−60
−60
−5.0
−600
625
5.0
1.5
12
−65
to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
325
150
Unit
°C/W
°C/W
TO−18
CASE 206AA
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
JAN2N2907A
JANTX2N2907A
JANTXV2N2907A
TO−18
Bulk
Package
Shipping
©
Semiconductor Components Industries, LLC, 2011
July, 2011
−
Rev. 0
1
Publication Order Number:
2N2907A/D
ONSEMI [ ON SEMICONDUCTOR ]
