1N5817, 1N5818, 1N5819
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
http://onsemi.com
•
•
•
•
Extremely Low V
F
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
These are Pb−Free Devices*
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE
20, 30 and 40 VOLTS
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 0.4 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max for 10 Seconds
•
Polarity: Cathode Indicated by Polarity Band
•
ESD Ratings: Machine Model = C (>400 V)
Human Body Model = 3B (>8000 V)
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
1N581x
YYWWG
G
A
=Assembly Location
1N581x =Device Number
x= 7, 8, or 9
YY
=Year
WW
=Work Week
G
=Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Preferred
devices are recommended choices for future use
and best overall value.
1
July, 2006 − Rev. 10
Publication Order Number:
1N5817/D
ONSEMI [ ON SEMICONDUCTOR ]
