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1N5352BRL 参数 Datasheet PDF下载

1N5352BRL图片预览
型号: 1N5352BRL
PDF下载: 下载PDF文件 查看货源
内容描述: 5瓦Surmetic 40齐纳电压Refulators [5 Watt Surmetic 40 Zener Voltage Refulators]
分类和应用: 二极管齐纳二极管测试
文件页数/大小: 8 页 / 74 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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1N5333B Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 1.2 V Max @ I
F
= 1.0 A for all types)
Zener Voltage
(Note 7)
Device
(Note 6)
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
Device
Marking
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
V
Z
(Volts)
Min
28.5
31.35
34.2
37.05
40.85
Nom
30
33
36
39
43
Max
31.5
34.65
37.8
40.95
45.15
@ I
ZT
mA
40
40
30
30
30
Zener Impedance
(Note 7)
Z
ZT
@ I
ZT
W
8
10
11
14
20
Z
ZK
@ I
ZK
W
140
150
160
170
190
I
ZK
mA
1
1
1
1
1
Leakage
Current
I
R
@ V
R
mA
Max
0.5
0.5
0.5
0.5
0.5
Volts
22.8
25.1
27.4
29.7
32.7
I
R
(Note 8)
A
3.7
3.5
3.5
3.1
2.8
DV
Z
(Note 9)
Volts
0.6
0.6
0.65
0.65
0.7
I
ZM
(Note 10)
mA
158
144
132
122
110
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
44.65
48.45
53.2
57
58.9
64.6
71.25
77.9
82.65
86.45
95
104.5
114
123.5
133
47
51
56
60
62
68
75
82
87
91
100
110
120
130
140
49.35
53.55
58.8
63
65.1
71.4
78.75
86.1
91.35
95.55
105
115.5
126
136.5
147
25
25
20
20
20
20
20
15
15
15
12
12
10
10
8
25
27
35
40
42
44
45
65
75
75
90
125
170
190
230
210
230
280
350
400
500
620
720
760
760
800
1000
1150
1250
1500
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
35.8
38.8
42.6
45.5
47.1
51.7
56
62.2
66
69.2
76
83.6
91.2
98.8
106
2.7
2.5
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.2
0.8
0.9
1.0
1.2
1.35
1.52
1.6
1.8
2.0
2.2
2.5
2.5
2.5
2.5
2.5
100
93
86
79
76
70
63
58
54.5
52.5
47.5
43
39.5
36.6
34
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B
142.5
152
161.5
171
180.5
190
150
160
170
180
190
200
157.5
168
178.5
189
199.5
210
8
8
8
5
5
5
330
350
380
430
450
480
1500
1650
1750
1750
1850
1850
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
114
122
129
137
144
152
1.1
1.1
1.0
1.0
0.9
0.9
3.0
3.0
3.0
4.0
5.0
5.0
31.6
29.4
28
26.4
25
23.6
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended choices for future use and best overall value.
6.
TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of
±5%.
7.
ZENER VOLTAGE (V
Z
) and IMPEDANCE (I
ZT
and I
ZK
)
Test conditions for zener voltage and impedance are as follows: I
Z
is applied 40
±10
ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (T
A
= 25°C +8°C, −2°C).
8.
SURGE CURRENT (I
R
)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 7 (T
A
= 25°C +8°C, −2°C).
9.
VOLTAGE REGULATION (DV
Z
)
The conditions for voltage regulation are as follows: V
Z
measurements are made at 10% and then at 50% of the I
Z
max value listed in the
electrical characteristics table. The test current time duration for each V
Z
measurement is 40
±10
ms. Mounting contact located as specified
in Note 7 (T
A
= 25°C +8°C, −2°C).
10.
MAXIMUM REGULATOR CURRENT (I
ZM
)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
I
ZM
for any device may not exceed the value of 5 watts divided by the actual V
Z
of the device. T
L
= 75°C at 3/8″ maximum from the device
body.
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