1.5SMC6.8AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25°C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
I
FSM
T
J
, T
stg
Value
1500
4.0
54.6
18.3
0.75
6.1
165
200
−65 to +150
Unit
W
W
mW/°C
°C/W
W
mW/°C
°C/W
A
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000
ms,
non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 100 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
Uni−Directional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms
non−repetitive duty cycle
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
