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KGF1323C 参数 Datasheet PDF下载

KGF1323C图片预览
型号: KGF1323C
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, 3PMMP, 3 PIN]
分类和应用: 晶体射频场效应晶体管
文件页数/大小: 7 页 / 85 K
品牌: OKI [ OKI ELECTRONIC COMPONETS ]
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E2Q0030-38-72
¡ electronic components
This version: Jul. 1998
Previous version: Jan. 1998
KGF1323
¡
electronic components
KGF1323
Power FET(Plastic Package Type)
GENERAL DESCRIPTION
The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET
that features high efficiency and high output power. The KGF1323 specifications are guaranteed
to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also
required. Because of its high efficiency, high output power (more than 33 dBm), and plastic
package, the KGF1323 is ideal as a transmitter-final-stage amplifier for personal handy phones,
such as TDMA-type cellular phones.
FEATURES
• High output power: 33 dBm (min.)
• High efficiency: 70% (typ.)
• Low thermal resistance: 23°C/W (typ.)
• Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.5
±
0.1
1.6
+0.15
–0.10
1.5
±
0.1
2.5
±
0.1
1
±
0.2
4
±
0.2
0.48
+0.08
–0.05
0.4
+0.08
–0.05
1.5
±
0.1 1.5
±
0.1
3
±
0.1
0.4
+0.08
–0.05
0.39
±
0.05
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
Cu
Solder plating
5
mm
or more
(Unit: mm)
1/7