NXP Semiconductors
PMLL4148L; PMLL4448
High-speed switching diodes
1.2
C
d
(pF)
1.0
mgd004
0.8
0.6
0.4
0
10
V
R
(V)
20
f = 1 MHz; T
j
= 25
°C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle
δ ≤
0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 6. Reverse recovery time test circuit and waveforms
I
1 kΩ
450
Ω
I
90 %
V
R
S
= 50
Ω
D.U.T.
OSCILLOSCOPE
R
i
= 50
Ω
10 %
t
t
r
t
p
input signal
VFR
t
output signal
mga882
Input signal: forward pulse rise time t
r
= 20 ns; forward current pulse duration t
p
≥
100 ns; duty cycle
δ ≤
0.005
Fig 7. Forward recovery voltage test circuit and waveforms
PMLL4148L_PMLL4448_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 31 January 2007
6 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
