PMLL4148L; PMLL4448
NXP Semiconductors
High-speed switching diodes
mgd004
1.2
C
d
(pF)
1.0
0.8
0.6
0.4
0
10
20
V
(V)
R
f = 1 MHz; Tj = 25 °C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
8. Test information
t
r
t
p
t
D.U.T.
10 %
I
F
+ I
F
t
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
= 50 Ω
V = V + I × R
S
i
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ ≤ 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 6. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
I
V
90 %
R
S
= 50 Ω
OSCILLOSCOPE
= 50 Ω
V
FR
D.U.T.
R
i
10 %
t
t
t
r
t
p
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 7. Forward recovery voltage test circuit and waveforms
PMLL4148L_PMLL4448
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 1 February 2011
5 of 11
NXP [ NXP ]
